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首页> 外文学位 >Lateral variation in the Schottky barrier height and ballistic electron transport characteristics of gold/(100)gallium arsenide and gold/platinum silicide/(100)silicon diodes.
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Lateral variation in the Schottky barrier height and ballistic electron transport characteristics of gold/(100)gallium arsenide and gold/platinum silicide/(100)silicon diodes.

机译：金/（100）砷化镓和金/硅化铂/（100）硅二极管的肖特基势垒高度和弹道电子传输特性的横向变化。

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摘要

Ballistic electron emission microscopy (BEEM) was used along with a variety of structural, chemical, and electrical characterization methods to investigate the electronic structure and transport properties of Au/(100)GaAs and Au/PtSi/(100)Si metal/semiconductor (MS) contacts. The first issue addressed was the effect of a native oxide diffusion layer on the stability and homogeneity of Au/(100)GaAs contacts. Next issue was the comparison of the passivation effects of an oxide diffusion barrier to those of a sulfide interlayer on the nanoscopic Schottky barrier height (SBH) distribution of Au/(100)GaAs contacts. The third and most important issue was the spatial inhomogeneity in the SBH formed at Au/PtSi/(100)Si and Au/(100)GaAs diodes. Lateral variations in the SBH were measured on length scales ranging from a few to several hundred nanometers using BEEM. All of the contacts investigated showed SBH spatial inhomogeneity. The most severe SBH variations observed were 0.11V/0.7nm in Au/(100)GaAs contacts and 0.08V/14nm for Au/PtSi/(100)Si contacts. The spatial profile and the statistical distribution of the SBHs thus obtained were compared to broad-area I/V and C/V characteristics of these MS contacts. Based on the lateral maps of the SBH at each interface, the difference between the locally averaged SBH and the globally averaged BEEM SBH was computed. This analysis showed that there is a critical diode area below which the SBH deviates significantly from the average SBH obtained from a larger diode area. This result implies that the uniformity of electrical characteristics of arrays of small devices can be expected to deteriorate significantly when device dimensions decrease below the critical length.;Included in this work are the results of thermal and electrical stability investigation of Co;In addition, the effects of alkali metal deposition on the performance of Mo microtip field emission arrays are described in this Dissertation.
机译：弹道电子发射显微镜（BEEM）与各种结构，化学和电学表征方法一起用于研究Au /（100）GaAs和Au / PtSi /（100）Si金属/半导体的电子结构和传输性能（ MS）联系人。解决的第一个问题是天然氧化物扩散层对Au /（100）GaAs接触的稳定性和均匀性的影响。下一个问题是在Au /（100）GaAs触头的纳米级肖特基势垒高度（SBH）分布上比较氧化物扩散势垒和硫化物中间层的钝化效果。第三个也是最重要的问题是在Au / PtSi /（100）Si和Au /（100）GaAs二极管上形成的SBH中的空间不均匀性。 SBH的横向变化是使用BEEM在几纳米到几百纳米的长度范围内测量的。所有调查的联系人均显示SBH空间不均匀。观察到的最严重的SBH变化在Au /（100）GaAs触点中为0.11V / 0.7nm，在Au / PtSi /（100）Si触点中为0.08V / 14nm。将由此获得的SBH的空间分布和统计分布与这些MS联系人的广域I / V和C / V特性进行比较。根据每个接口处SBH的横向图，计算局部平均SBH与全局平均BEEM SBH之间的差异。该分析表明存在一个临界二极管面积，在该临界二极管面积以下，SBH与从较大二极管面积获得的平均SBH明显偏离。该结果表明，当器件尺寸减小到临界长度以下时，可以预期小型器件阵列的电特性均匀性将显着降低。;这项工作包括对Co进行热和电稳定性研究的结果;此外，本文介绍了碱金属沉积对Mo微尖端场发射阵列性能的影响。

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  • 作者

    Talin, Albert Alec.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Materials science.;Electrical engineering.
  • 学位 Ph.D.
  • 年度 1995
  • 页码 183 p.
  • 总页数 183
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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