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Towards Photonic-Plasmonic Integrated Circuits: Study and Fabrication Of Electrically-Pumped Plasmonic Nano-Laser.

机译:走向光子-肺集成电路:电泵激等离子体纳米激光的研究与制造。

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摘要

For the next generation of optical communication, Photonic Integrated Circuits (PIC) and optoelectronic integrated circuits has been of great interest because of the possibility of integrating multiple optical components and electronics together to give high performance opto-electronic system on a small chip that can be produced cost-effectively. Integrated semiconductor laser, as the main light source for generating signals in optical communications, is one of the most important function on a photonic integrated circuit. In the recent advancements in nanophotonics, strong confinement of light in strongly-guiding optical waveguide structure comparing to conventional structures, has been used to improve certain performances of on-chip semiconductor lasers and miniaturize the laser device sizes. However, compared to electronics, even with use of nanophotonic device technology, optoelectronic device footprints are still relatively large due to the diffraction limit of light, which poses a limit on the sizes of optoelectronic devices.;Plasmonic photonic device area has been an intensive field of research that utilizes plamonic photonic waveguides to confine light smaller than the diffraction limit through the effect of surface plasmon polariton, a coupling between photons and plasmon along a metal-dielectric interface. In this dissertation, an electrically pumped Plasmonic nanolaser has been designed using 2D-FDTD simulation. The nanolaser has the potential of lasing utilizing achievable optical gain in the typical compound (group III-V) semiconductor materials. The laser electrical pumping structure is compatible with device integration on silicon photonics platform utilizing silicon-on-insulator (SOI) substrate.;Electrically pumped thin film based laser structure is shown to be realizable with the use of TCO material as transparent electrodes on the waveguide cladding. Indium oxide (In2O3) and Zinc-Indium-Tin-Oxide (ZITO) deposited by ion-beam-assisted deposition (IAD) have been studied for their material physical, optical, and electrical properties, over a wide range of conductivity and transparency at the optical communication wavelength range. In particular, their electrical contact properties to n-type and p-type InP have been examined, and Ohmic contact to n-InP have been achieved. The contact resistance is as low as 10-6Ocm2.;Based on the abovementioned technological developments, electrically-pumped plasmonic semiconductor nanolasers have been designed and fabricated, and their structures have been optimized via minimizing their optical modal losses. The fabrication process has been calibrated and initial device measurement results have been studied. The results show various challenges for the realization of electrically pumped nanoscale Plasmonic laser devices that can be improved in the future, which are discussed in detail.
机译:对于下一代光通信,光子集成电路(PIC)和光电子集成电路引起了人们的极大兴趣,因为它可以将多个光组件和电子器件集成在一起,从而在一个小型芯片上提供高性能的光电子系统。高性价比地生产。集成半导体激光器作为光通信中产生信号的主要光源,是光子集成电路上最重要的功能之一。在纳米光子学的最新进展中,与常规结构相比,在强导光波导结构中对光的强限制已被用于改善芯片上半导体激光器的某些性能并最小化激光器装置的尺寸。然而,与电子产品相比,即使使用纳米光子器件技术,由于光的衍射极限,光电子器件的占地面积仍然相对较大,这对光电子器件的尺寸构成了限制。的研究利用表面光子极化子的作用,即沿金属-电介质界面的光子和等离激元之间的耦合,利用质子光子波导来限制小于衍射极限的光。本文利用二维FDTD模拟技术设计了电泵浦等离子体纳米激光。在典型的化合物(III-V族)半导体材料中,纳米激光具有利用可实现的光学增益进行激光发射的潜力。该激光泵浦结构与使用绝缘体上硅(SOI)衬底的硅光子平台上的器件集成兼容;显示了通过将TCO材料用作波导上的透明电极,可以实现基于电泵薄膜的激光结构覆层。已经研究了通过离子束辅助沉积(IAD)沉积的氧化铟(In2O3)和锌铟锡氧化物(ZITO)的材料物理,光学和电学性质,在宽范围的电导率和透明性下,光通信波长范围。特别地,已经检查了它们与n型和p型InP的电接触特性,并且已经实现了与n-InP的欧姆接触。接触电阻低至10-6Ocm2。基于上述技术发展,设计并制造了电泵浦等离子体半导体纳米激光器,并通过最小化其光学模态损耗来优化了其结构。已对制造过程进行了校准,并对初始设备的测量结果进行了研究。结果显示了实现未来可改进的电泵浦纳米等离子激元激光器器件的各种挑战,对此进行了详细讨论。

著录项

  • 作者

    Hseih, Chunhan Michael.;

  • 作者单位

    Northwestern University.;

  • 授予单位 Northwestern University.;
  • 学科 Electrical engineering.;Materials science.;Optics.
  • 学位 Ph.D.
  • 年度 2016
  • 页码 143 p.
  • 总页数 143
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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