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首页> 外文学位 >QUANTUM OSCILLATIONS IN THE TRANSVERSE MAGNETORESISTANCE (SHUBNIKOV - DE HAAS EFFECT) AND ELECTRONIC CONDUCTION IN THE DILUTED MAGNETIC SEMICONDUCTOR MERCURY(1-X)IRON(X)SELENIDE.
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QUANTUM OSCILLATIONS IN THE TRANSVERSE MAGNETORESISTANCE (SHUBNIKOV - DE HAAS EFFECT) AND ELECTRONIC CONDUCTION IN THE DILUTED MAGNETIC SEMICONDUCTOR MERCURY(1-X)IRON(X)SELENIDE.

机译：横向磁阻（SHUBNIKOV-DE HAAS效应）中的量子振荡和稀释的磁半导体（1-X）铁（X）硒中的电子传导。

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摘要

A study of the quantum oscillations in the transverse magneto- resistance (Shubnikov-de Haas effect) in oriented single crystals of Hg(,1-x)Fe(,x)Se with x (LESSTHEQ) 0.06 has been made as a function of tempera- ture (1.3 K (LESSTHEQ) T (LESSTHEQ) 35K) and for magnetic fields less than 5 Tesla. Significant(, )differences in the temperature dependence of the amp- litude of the oscillations for magnetic fields oriented along 110 , 111 , and 001 have been observed. The analysis of the data for (')H// 110 provide evidence for spin dependent scattering of the conduction electrons. Lineshape fits to the data allow estimates for the difference Dingle temperature (delta)T(,D) and the exchange enhanced effective g-factor as a function of temperature and magnetic field. It is concluded that some Fe ions, when incorporated in a HgSe host, exist in a magnetically active state. This result indicates the presence of Fe('+3) in addition to the Fe('+2) that might normally be expected in this material.; In addition the amplitude of these oscillations as a function of the magnet angle for two different planes of rotation for x = 0.03 and x = 0.05 have been measured. The results clearly show two sets of zeros in the amplitude of the fundamental harmonic with completely different angular dependences. Low field zeros (H < 1 Tesla) have been identified that have a similar angular dependence as those reported for HgSe. The position of the zeros can not be explained by the combination of two different signals which result from lack of the inversion symmetry in the zinc-blende structure of the lattice. A distinct set of high field zeros (H > 1 Tesla) have also been observed which exhibit a different angular dependence than the zeros formed in HgSe.; Finally, the variation in the carrier concentration as function of annealing conditions in HgSe, Hg(,1-x)Mn(,x)Se, and Hg(,1-x)Fe(,x)Se has been studied. Our results show that the carrier concentration in Hg(,1-x)Fe(,x)Se system with x (GREATERTHEQ) .003 is very stable and shows no change under various annealing conditions. Measurements of the Dingle temperature from Shubnikov-de Haas oscillations, in addition to Hall mobilities at T = 4.2K, indicate a significantly longer collision time for the conduction electrons in Hg(,1-x)Fe(,x)Se for x (LESSTHEQ) 0.003 than in samples of HgSe with the same electron concentrations. The results of electron microprobe measurements on samples of Hg(,1-x)Mn(,x)Se and Hg(,1-x)Fe(,x)Se also suggest different temperature-composition diagrams for these two systems.
机译：研究了Hg（，1-x）Fe（，x）Se取向单晶中x（LESSTHEQ）为0.06时横向磁阻的量子振荡（Shubnikov-de Haas效应）。温度（1.3 K（LESSTHEQ）T（LESSTHEQ）35K）和小于5特斯拉的磁场。对于沿110、111和001定向的磁场，已经观察到振荡幅度与温度的显着差异。对（'）H // 110数据的分析为传导电子的自旋相关性散射提供了证据。线形拟合到数据允许估计差温度Dingle温度ΔT（，D）以及交换增强的有效g因子随温度和磁场的变化。可以得出结论，当某些Fe离子掺入HgSe主体时，会以磁活性状态存在。该结果表明除了通常在该材料中可能期望的Fe（'+ 2）之外，还存在Fe（'+ 3）。另外，已经测量了对于x ＝ 0.03和x ＝ 0.05，对于两个不同的旋转平面，这些振荡的振幅作为磁体角的函数。结果清楚地显示了基波谐波幅度的两组零，它们具有完全不同的角度依赖性。已确定低场零（H <1 Tesla）具有与HgSe报告的相近的角度依赖性。零位的位置无法通过两个不同信号的组合来解释，这两个信号是由于晶格的锌-闪耀结构缺乏反转对称性而导致的。还观察到一组独特的高场零点（H> 1 Tesla），它们显示出与HgSe中形成的零点不同的角度依赖性。最后，研究了HgSe，Hg（，1-x）Mn（，x）Se和Hg（，1-x）Fe（，x）Se中载流子浓度随退火条件的变化。我们的结果表明，Hg（，1-x）Fe（，x）Se体系中的x（GREATERTHEQ）为0.003时，载流子浓度非常稳定，并且在各种退火条件下均没有变化。测量Shubnikov-de Haas振荡的Dingle温度，以及在T = 4.2K时的霍尔迁移率，表明在Hg（，1-x）Fe（，x）Se中，传导电子在x（ LESSTHEQ）比在相同电子浓度的HgSe样品中低0.003。 Hg（，1-x）Mn（，x）Se和Hg（，1-x）Fe（，x）Se样品的电子探针测量结果也为这两个系统提供了不同的温度组成图。

著录项

  • 作者

    VAZIRI, MOJTABA.;

  • 作者单位

    Purdue University.;

  • 授予单位 Purdue University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 1985
  • 页码 152 p.
  • 总页数 152
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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