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Design and fabrication of 4H silicon carbide MOSFETs.

机译：4H碳化硅MOSFET的设计与制造。

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摘要

The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulties in the development of 4H-SiC power MOSFET have been low MOS channel mobility and gate oxide reliability. In this dissertation, a novel 4H-SiC power MOSFET structure has been presented with the aim of solving these problems.;The research started from the study and improvement of the channel mobility of lateral trench-gate MOSFET that features an accumulation channel for high channel mobility. The design, fabrication and characterization of lateral trench-gate MOSFET are presented. The fabricated lateral trench-gate MOSFET with an accumulation channel of 0.15 mum exhibited a high peak channel mobility of 95 cm2/Vs at room temperature and 255 cm2/Vs at 200°C with stable normally-off operation.;Based on the successful demonstration of high channel mobility, a vertical trench-gate power MOSFET structure has been designed and developed. This structure also features an epitaxial N-type accumulation channel to take advantage of high channel mobility. Moreover, this structure introduces a submicron N-type vertical channel by counter-doping the P base region via a low-dose nitrogen ion implantation. The implanted vertical channel provides effective shielding for gate oxide from high electric field.;A process using the oxidation of polysilicon was developed to achieve self-alignment between the submicron vertical channel and the gate trench. A "sandwich" process, including nitric oxide growth, dry oxygen growth and nitric oxide annealing, was incorporated to grow high-quality gate oxide.;The fabricated single-gate vertical MOSFET can block up to 890 V at zero gate bias. The device exhibited a low specific on-resistance of 9.3 mOcm 2 at VGS=70 V, resulting in an improved FOM &parl0;V2B/RON&parr0; of 85 MW/cm2. A large-area MOSFET with an active area of 4.26x10-2 cm2 can block up to 810V with a low leakage current of 21 muA and conducted a high on-current of 1 A at VDS=3 V and VGS=50 V. The fabricated devices all exhibited the stable normally-off operation with threshold voltages of 5∼6 V. Their subthreshold characteristics with high on/off ratios of 3∼5 indicates that the MOSFETs are capable of operating stably as switching devices.
机译：4H-SiC功率MOSFET是功率应用的理想选择。 4H-SiC功率MOSFET开发中的主要技术难题是MOS沟道迁移率低和栅极氧化物可靠性低。为解决这些问题，本文提出了一种新型的4H-SiC功率MOSFET结构。研究是从研究和改进具有高沟道累积沟道的横向沟槽栅MOSFET沟道迁移率开始的。流动性。介绍了横向沟槽栅MOSFET的设计，制造和特性。制作的具有0.15mum累积沟道的横向沟槽栅MOSFET在室温下具有95 cm2 / Vs的高峰值沟道迁移率，在200°C下具有255 cm2 / Vs的高峰值沟道迁移率，并且具有稳定的常关操作。考虑到高沟道迁移率，已经设计和开发了垂直沟槽栅极功率MOSFET结构。该结构还具有外延N型累积通道的特征，以利用高通道迁移率。此外，该结构通过经由低剂量氮离子注入对P基极区进行反掺杂而引入了亚微米N型垂直沟道。注入的垂直沟道为栅极氧化物免受高电场提供了有效的屏蔽。；开发了一种利用多晶硅氧化的工艺，以实现亚微米垂直沟道与栅极沟槽之间的自对准。结合了“三明治”工艺，包括一氧化氮生长，干氧生长和一氧化氮退火，以生长出高质量的栅极氧化物。所制造的单栅极垂直MOSFET在零栅极偏置下可以阻挡高达890 V的电压。该器件在VGS = 70 V时表现出9.3 mOcm 2的低导通电阻，从而改善了FOM＆amp; V2B / RON＆parr0;。 85兆瓦/平方厘米。有源区域为4.26x10-2 cm2的大面积MOSFET在VDS = 3 V和VGS = 50 V的情况下，可以阻断高达810V的电流，具有21μA的低泄漏电流，并传导1A的高导通电流。所制造的器件均在5〜6 V的阈值电压下表现出稳定的常关操作。它们的亚阈值特性具有3〜5的高导通/截止比，表明MOSFET能够稳定地用作开关器件。

著录项

  • 作者

    Wu, Jian.;

  • 作者单位

    Rutgers The State University of New Jersey - New Brunswick.;

  • 授予单位 Rutgers The State University of New Jersey - New Brunswick.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 166 p.
  • 总页数 166
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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