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首页> 外文学位 >INVERSION LAYER SOLAR CELLS USING IONIZING RADIATION-INDUCED SURFACE INVERSION IN INDIUM OXIDE/SILICON DIOXIDE/SILICON STRUCTURES (RADIATION HARD).
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INVERSION LAYER SOLAR CELLS USING IONIZING RADIATION-INDUCED SURFACE INVERSION IN INDIUM OXIDE/SILICON DIOXIDE/SILICON STRUCTURES (RADIATION HARD).

机译：使用电离辐射诱导的氧化铟/氧化硅/二氧化硅/硅结构（辐射硬）中的表面倒置的层状太阳能电池。

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摘要

A novel application of the effects of ionizing radiation on MOS structures is presented in this dissertation. It will be shown that high efficiency inversion layer solar cells, having an In(,2)O(,3)/SiO(,2)/Si MOS as a basic structure, can be made by using ionizing radiation to produce the required inversion layer. An average total area efficiency of over 15 percent under simulated AM1 illumination, with a highest value of 16.0 percent, has been achieved without antireflection coating.;The key to the success of this method is the fact that exposure of the In(,2)O(,3) MOS structure to X-rays, with positive bias on the gate, creates a large amount of positive oxide charge without generating an appreciable density of interface traps. In contrast, for a similar MOS structure with an aluminum electrode, a very large density of interface traps is generated by the same X-ray treatment.;Extensive experimentation has demonstrated that, in addition to the favorable interfacial stress distribution in the MOS structure induced by the In(,2)O(,3) film, the radiation hardness of the In(,2)O(,3) MOS structure arises mainly from the low concentration of water or hydrogen related sites in the oxide, resulting from the built-in vacuum bake treatment during the In(,2)O(,3) evaporation process. Through this finding, the mechanisms of the generation of radiation-induced interface traps become much clearer. This vacuum bake process may also be utilized to fabricate radiation-hard devices for other applications.;Compared to a conventional p-n junction cell, the inversion layer cell has a much better short wavelength response. Moreover, a stability test of the cell at elevated temperature has shown essentially no degradation after the cell is held at 200(DEGREES)C for several months.
机译：本文提出了电离辐射对MOS结构的影响的新应用。将显示出，通过使用电离辐射来产生所需的反转，可以制成具有In（，2）O（，3）/ SiO（，2）/ Si MOS作为基本结构的高效反转层太阳能电池。层。在不使用抗反射涂层的情况下，在模拟AM1照明下平均总面积效率超过15％，最高值为16.0％.;该方法成功的关键在于In（，2）的曝光X射线的O（，3）MOS结构在栅极上带有正偏压，会产生大量正氧化物电荷，而不会产生明显的界面陷阱密度。相反，对于具有铝电极的类似MOS结构，通过相同的X射线处理会产生非常大的界面陷阱密度。广泛的实验表明，除了在MOS结构中诱导出良好的界面应力分布外，通过In（，2）O（，3）膜，In（，2）O（，3）MOS结构的辐射硬度主要是由于氧化物中水或氢相关位点的浓度低所致。 In（，2）O（，3）蒸发过程中内置的真空烘烤处理。通过这一发现，辐射诱导的界面陷阱的生成机理变得更加清晰。该真空烘烤工艺也可用于制造用于其他应用的抗辐射装置。与传统的p-n结单元相比，反型层单元具有更好的短波长响应。而且，在高温下对电池的稳定性测试表明，将电池在200℃下放置几个月后，基本上没有降解。

著录项

  • 作者

    OKUYAMA, YOSHIKAZU.;

  • 作者单位

    Yale University.;

  • 授予单位 Yale University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1985
  • 页码 141 p.
  • 总页数 141
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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