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Physics of the current injection process during localized helicity injection.

机译：局部螺旋注入过程中当前注入过程的物理过程。

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摘要

An impedance model has been developed for the arc-plasma cathode electron current source used in localized helicity injection tokamak startup. According to this model, a potential double layer (DL) is established between the high-density arc plasma (narc ∼ 1021 m-3) in the electron source, and the less-dense external tokamak edge plasma (nedge ∼ 10 18 m-3) into which current is injected. The DL launches an electron beam at the applied voltage with cross-sectional area close to that of the source aperture: Ainj ≈ 2 cm 2. The injected current, Iinj, increases with applied voltage, Vinj, according to the standard DL scaling, Iinj ∼ V(3/2/ inj), until the more restrictive of two limits to beam density nb arises, producing Iinj ∼ V(1/2/inj), a scaling with beam drift velocity. For low external tokamak edge density nedge, space-charge neutralization of the intense electron beam restricts the injected beam density to nb ∼ nedge. At high Jinj and sufficient edge density, the injected current is limited by expansion of the DL sheath, which leads to nb ∼ narc. Measurements of narc, Iinj , nedge, Vinj, support these predicted scalings, and suggest narc as a viable control actuator for the source impedance. Magnetic probe signals ≈ 300 degrees toroidally from the injection location are consistent with expectations for a gyrating, coherent electron beam with a compact areal cross-section. Technological development of the source has allowed an extension of the favorable Iinj ∼ V(1/2/inj) to higher power without electrical breakdown.
机译：已经为用于局部螺旋注入托卡马克启动的电弧等离子体阴极电子电流源开发了阻抗模型。根据该模型，在电子源中的高密度电弧等离子体（narc〜1021 m-3）和密度较低的外部托卡马克边缘等离子体（nedge〜10 18 m-）之间建立了潜在的双层（DL）。 3）注入电流。 DL以所施加的电压发射电子束，其横截面积接近源孔的横截面积： 2 cm 2.根据标准的DL标度Iinj〜V（3/2 / inj），注入的电流Iinj随着施加的电压Vinj的增加而增加，直到出现对束密度nb的两个限制的更严格限制，从而产生Iinj 〜V（1/2 / inj），与光束漂移速度成比例。对于较低的外部托卡马克边缘密度nedge，强电子束的空间电荷中和将注入的电子束密度限制为nb〜nedge。在高Jinj和足够的边缘密度下，注入电流受到DL鞘层膨胀的限制，从而导致nb〜narc。 narc，Iinj，nedge，Vinj的测量结果支持了这些预测的缩放比例，并建议narc作为源阻抗的可行控制执行器。磁探针信号＆ap;距注射位置呈环形300度，这与具有紧凑的横截面横截面的旋转，相干电子束的预期一致。源技术的发展已允许将有利的Iinj〜V（1/2 / inj）扩展到更高的功率，而不会发生电击穿。

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  • 作者

    Hinson, Edward Thomas.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Plasma physics.;Nuclear engineering.
  • 学位 Ph.D.
  • 年度 2015
  • 页码 143 p.
  • 总页数 143
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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