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Highly Integrated Switched-Mode Power Converters Employing CMOS and GaN Technologies for Distributed MPPT.

机译：采用CMOS和GaN技术的分布式MPPT的高度集成开关模式电源转换器。

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摘要

The photovoltaic systems used to convert solar energy to electricity pose a multitude of design and implementation challenges, including energy conversion efficiency, partial shading effects, and power converter efficiency. Using power converters for Distributed Maximum Power Point Tracking (DMPPT) is a well-known architecture to significantly reduce power loss associated with mismatched panels. Sub-panel-level DMPPT is shown to have up to 14.5% more annual energy yield than panel-level DMPPT, and requires an efficient medium power converter.;This research aims at implementing a highly efficient power management system at sub-panel level with focus on system cost and form-factor. Smaller form-factor motivates increased converter switching frequencies to significantly reduce the size of converter passives and substantially improve transient performance. But, currently available power MOSFETs put a constraint on the highest possible switching frequency due to increased switching losses. The solution is Gallium Nitride based power devices, which deliver figure of merit (FOM) performance at least an order of magnitude higher than existing silicon MOSFETs. Low power loss, high power density, low cost and small die sizes are few of the qualities that make e-GaN superior to its Si counterpart. With careful design, e-GaN can enable a 20-30% improvement in power stage efficiency compared to converters using Si MOSFETs.;The main objective of this research is to develop a highly integrated, high efficiency, 20MHz, hybrid GaN-CMOS DC-DC MPPT converter for a 12V/5A sub-panel. Hard and soft switching boost converter topologies are investigated within this research, and an innovative CMOS gate drive technique for efficiently driving an e-GaN power stage is presented in this work. The converter controller also employs a fast converging analog MPPT control technique.
机译：用于将太阳能转换为电能的光伏系统带来了许多设计和实施挑战，包括能量转换效率，部分遮蔽效应和功率转换器效率。使用功率转换器进行分布式最大功率点跟踪（DMPPT）是一种众所周知的体系结构，可以显着减少与面板不匹配相关的功率损耗。与面板级DMPPT相比，子面板级DMPPT的年发电量高出14.5％，并且需要高效的中功率转换器。该研究旨在在子面板级上实现高效的电源管理系统，着重于系统成本和外形尺寸。较小的外形尺寸会促使转换器开关频率增加，从而显着减小转换器无源器件的尺寸并显着改善瞬态性能。但是，由于开关损耗增加，当前可用的功率MOSFET限制了最高可能的开关频率。解决方案是基于氮化镓的功率器件，其功率因数（FOM）性能至少比现有的硅MOSFET高出一个数量级。低功率损耗，高功率密度，低成本和小晶粒尺寸是使e-GaN优于其Si同类产品的几项品质。通过精心设计，与使用Si MOSFET的转换器相比，e-GaN可以将功率级效率提高20-30％.;本研究的主要目标是开发高度集成，高效，20MHz的混合GaN-CMOS DC -DC MPPT转换器，用于12V / 5A子面板。在这项研究中，对硬开关和软开关升压转换器的拓扑进行了研究，并提出了可有效驱动e-GaN功率级的创新CMOS栅极驱动技术。转换器控制器还采用了快速收敛的模拟MPPT控制技术。

著录项

  • 作者

    Achary, Kiran Kumar Krishnan.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Electrical engineering.
  • 学位 M.S.
  • 年度 2015
  • 页码 66 p.
  • 总页数 66
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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