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High Efficiency GaAs-based Solar Cells Simulation and Fabrication.

机译：基于GaAs的高效太阳能电池仿真和制造。

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摘要

GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. Photon recycling reduces the effect of radiative recombination and is an approach to obtain the device performance described by detailed balance theory. The photon recycling model has been developed and was applied to investigate the loss mechanisms in the state-of-the-art GaAs-based solar cell structures using PC1D software.;A standard fabrication process of the GaAs-based solar cells is as follows: wafer preparation, individual cell isolation by mesa, n- and p-type metallization, rapid thermal annealing (RTA), cap layer etching, and anti-reflection coating (ARC). The growth rate for GaAs-based materials is one of critical factors to determine the cost for the growth of GaAs-based solar cells. The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. The solar cell wafers grown at different growth rates of 14 mum/hour and 55 mum/hour were discussed in this work. The structural properties of the wafers were characterized by X-ray diffraction (XRD) to identify the crystalline quality, and then the as-grown wafers were fabricated into solar cell devices under the same process conditions. The optical and electrical properties such as surface reflection, external quantum efficiency (EQE), dark I-V, Suns-Voc, and illuminated I-V under one sun using a solar simulator were measured to compare the performances of the solar cells with different growth rates. Some simulations in PC1D have been demonstrated to investigate the reasons of the different device performances between fast growth and slow growth structures. A further analysis of the minority carrier lifetime is needed to investigate into the difference in device performances.
机译：基于GaAs的太阳能电池吸引了很多关注，因为它们在一种阳光照射下的转换效率高达28％。 GaAs基太阳能电池的主要载流子复合机理是表面复合，辐射复合和非辐射复合。光子回收减少了辐射复合的影响，是获得详细平衡理论描述的器件性能的一种方法。已经开发出了光子回收模型，并使用PC1D软件将其用于研究最新的基于GaAs的太阳能电池结构中的损耗机理。;基于GaAs的太阳能电池的标准制造工艺如下：晶圆准备，通过台面进行单个电池隔离，n型和p型金属化，快速热退火（RTA），覆盖层蚀刻和减反射涂层（ARC）。基于GaAs的材料的生长速率是确定基于GaAs的太阳能电池的生长成本的关键因素之一。如果增加生长速率而不降低晶体质量，则可以降低制造基于GaAs的太阳能电池的成本。在这项工作中讨论了以14微米/小时和55微米/小时的不同增长率生长的太阳能电池晶片。通过X射线衍射（XRD）表征晶片的结构特性以鉴定晶体质量，然后在相同的工艺条件下将生长的晶片制成太阳能电池器件。使用太阳模拟器测量了光学和电学性质，例如表面反射，外部量子效率（EQE），暗I-V，Suns-Voc和光照I-V，以比较具有不同生长速率的太阳能电池的性能。已经证明了PC1D中的一些仿真可以研究快速增长和慢速增长结构之间设备性能不同的原因。需要对少数载流子寿命进行进一步分析，以调查器件性能的差异。

著录项

  • 作者

    Zhang, Chaomin.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.;Energy.
  • 学位 M.S.
  • 年度 2014
  • 页码 90 p.
  • 总页数 90
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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