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Feasibility and Application of a CuxO-Based Memristor for Sensing Oxygen and Other Gases

机译：基于CuxO的忆阻器检测氧气和其他气体的可行性和应用

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摘要

This dissertation introduces the design, fabrication, and application of a copper-oxide-based memristor for the passive sensing of oxygen and other gases. The device design was as follows: Deposition of copper (Cu) bottom electrodes, (oxygen) vacancy-rich copper oxide (CuxO) switching layers, and tungsten (W) top electrodes in a crossbar array structure. The CuxO layer was deposited via reactive sputtering of a Cu target with an argon-oxygen (Ar/O2) mixture. A portion of this layer was extended from each array cell to be exposed for sensing. Memristive devices of different switching layer thicknesses were initially explored for irreversible sensing of oxygen in ambient air. Results of this first experiment demonstrated an increase in resistance states upon prolonged exposure to ambient air. For the second experiment, memristive devices were fabricated with sub-micron holes that were etched into the W top electrode to better reveal the switching layer surface. The devices were also subjected to ambient oxygen at 180 deg C to induce passive sensing in minutes. Resistance results were consistent with the first experiment but also revealed a dependence on the surface area of the exposed oxide. Finally, memristive devices were investigated in a third experiment for reversible sensing of an oxidizing gas and reducing gas at room temperature. This time, changes were not only observed in resistance but also in hysteresis (current versus voltage) depending on the type of gas introduced. Overall, this work demonstrates a step towards the use of the memristor as a gas sensor, which we have named "memsensors", by taking advantage of the device's ability to memorize (or record) historical information.
机译：本文介绍了一种用于被动感应氧气和其他气体的基于氧化铜的忆阻器的设计，制造和应用。器件设计如下：以交叉阵列结构沉积铜（Cu）底部电极，（氧）空位丰富的氧化铜（CuxO）开关层和钨（W）顶部电极。通过使用氩氧（Ar / O2）混合物对铜靶进行反应性溅射来沉积CuxO层。从每个阵列单元延伸出该层的一部分以暴露以进行感测。最初探索了不同开关层厚度的忆阻器件，用于不可逆地感测周围空气中的氧气。第一个实验的结果表明，长时间暴露于环境空气中，电阻状态会增加。对于第二个实验，制造了具有亚微米孔的忆阻器件，该孔被蚀刻到W顶部电极中，以更好地露出开关层表面。器件还经受了180摄氏度的环境氧气的作用，以在数分钟内引发被动感应。电阻结果与第一个实验一致，但也显示出对暴露的氧化物表面积的依赖性。最后，在第三实验中研究了忆阻器件，用于在室温下可逆地检测氧化性气体和还原性气体。这次，不仅观察到电阻的变化，而且还观察到磁滞的变化（电流与电压的关系），具体取决于引入的气体类型。总体而言，这项工作展示了利用忆阻器作为气体传感器的一个步骤，我们利用该设备记忆（或记录）历史信息的能力，将其称为“ memsensors”。

著录项

  • 作者

    Nyenke, Chinwe Pamela.;

  • 作者单位

    Michigan State University.;

  • 授予单位 Michigan State University.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2017
  • 页码 131 p.
  • 总页数 131
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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