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Development of High Efficiency III/V Photovoltaic Devices

机译：高效III / V光伏器件的开发

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摘要

Developments of photovoltaic (PV) devices are driven by increasing needs for economically competitive renewable energy conversion. To improve the efficiency of PV devices for outdoor applications, the concept of intermediate band solar cell (IBSC) has been proposed to boost the conversation efficiency to 63% under concentrated suns illumination, which requires two-step photon absorption (TSPA) dominates among other competing processes: carrier thermal escape, tunneling and recombination. To optimize the design of III-V QD-IBSCs, first, the effect of electric field on band structure and carrier dynamics and device performances were quantitative investigated via simulation and experiments. Second, to experimentally increase TSPA at room temperature, novel QD systems related QD-IBSCs were designed, fabricated and characterized. The InAs/Al0.3GaAs QD-IBSC shows high TSPA working temperature towards 110K, promising for a room temperature IBSC under concentrated sunlight. Alternative QD systems including GaSb/GaAs and type II InP/InGaP were also investigated via band structure simulations. Meanwhile, developments of PV devices under indoor low intensity light (0.1 muW/cm2-1 mW/cm2) illumination not only enable long lifetime radio-isotope based batteries, but also, more important for the daily life, have the potential to promote an emerging market of internet of things by efficiently powering wireless sensors. Single junction InGaP PV devices were optimized for low intensity light sources using via simulations and statistical control. To reduce the dark current and increase the absorption at longer wavelengths (>550 nm), several parameters including doping and thickness were evaluated. The experimental results on the devices show higher conversion efficiencies than other commercial PVs under varied indoor light sources: 29% under 1muW/cm2 phosphor spectrum and over 30% efficiency under LEDs illumination. In addition, the work includes developments of InAs nanowires epi-growth for PV applications. Several marks for selective area growth were successfully made.
机译：光伏（PV）器件的发展受到对经济上具有竞争力的可再生能源转换的需求的增长。为了提高用于室外应用的光伏设备的效率，提出了中频带太阳能电池（IBSC）的概念，以将聚光照射下的对话效率提高到63％，这需要两步光子吸收（TSPA）等技术。竞争过程：载体热逸出，隧穿和复合。为了优化III-V QD-IBSC的设计，首先，通过仿真和实验定量研究了电场对能带结构和载流子动力学以及器件性能的影响。其次，为了实验地提高室温下的TSPA，设计，制造和表征了与QD-IBSC相关的新型QD系统。 InAs / Al0.3GaAs QD-IBSC的TSPA工作温度高达110K，有望在阳光集中的室温下使用IBSC。还通过带结构仿真研究了包括GaSb / GaAs和II型InP / InGaP在内的其他QD系统。同时，在室内低强度光（0.1μW/ cm2-1 mW / cm2）照明下开发PV装置不仅可以使基于放射性同位素的电池寿命长，而且对于日常生活更重要，因此有可能促进通过高效地为无线传感器供电，新兴的物联网市场。单结InGaP PV器件通过模拟和统计控制针对低强度光源进行了优化。为了减少暗电流并增加在更长波长（> 550 nm）处的吸收，评估了几个参数，包括掺杂和厚度。在各种室内光源下，这些器件的实验结果显示出比其他商用PV更高的转换效率：在1muW / cm2荧光粉光谱下为29％，在LED照明下为30％以上。此外，该工作还包括用于光伏应用的InAs纳米线的外延生长。选择性面积增长的几个标记已成功完成。

著录项

  • 作者

    Dai, Yushuai.;

  • 作者单位

    Rochester Institute of Technology.;

  • 授予单位 Rochester Institute of Technology.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2017
  • 页码 166 p.
  • 总页数 166
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 公共建筑;
  • 关键词

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