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Non-linear response of two-dimensional electron systems at low temperatures to electric and magnetic fields.

机译：二维电子系统在低温下对电场和磁场的非线性响应。

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摘要

The nonlinear behavior of low-dimensional electron systems has attracted a great deal of attention for its fundamental interest as well as for potentially important applications in nanoelectronics. This work focuses on experimental results related to the nonlinear behavior of two dimensional electron systems. We first observed the non-linear zero-differential resistance state (ZDRS) that occurs for highly mobile two dimensional electron systems in response to a dc bias in the presence of a strong magnetic field applied perpendicular to the electron plane is suppressed. We found that it disappears gradually as the magnetic field is tilted away from the perpendicular at fixed filling factor. Good agreement is found with a model that considers the effect of the Zeeman splitting of Landau levels enhanced by the in-plane component of the magnetic field. Furthermore, we observed that when an electric field is applied to conductors, it heats electric charge carriers. It is demonstrated that an electric field applied to a conductor with a discrete electron spectrum produces a non-equilibrium electron distribution, which cannot be described by temperature. Such electron distribution changes significantly the conductivity of the electrons in a magnetic field, and forces them into a state with a zero differential resistance. Most importantly, the results demonstrate that in general, the effective overheating in the systems with discrete spectrum is significantly stronger than the one in systems with continuous and homogeneous distribution of the energy levels at the same input power. In the last part we observed non-linear behavior in a silicon MOSFET. Measurements of the rectification of microwave radiation at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surface for different temperatures, electron densities and microwave power, were performed. A theory is proposed that attributes the rectification to the thermoelectric response due to strong local overheating by the microwave radiation at the boundary between two dissimilar 2D metals.
机译：低维电子系统的非线性行为因其基本兴趣以及在纳米电子学中潜在的重要应用而引起了广泛的关注。这项工作的重点是与二维电子系统的非线性行为有关的实验结果。我们首先观察到在垂直于电子平面施加强磁场的情况下，高移动二维电子系统响应直流偏置而发生的非线性零差电阻状态（ZDRS）。我们发现，当磁场以固定填充因子远离垂直线倾斜时，磁场逐渐消失。在考虑磁场的平面内分量增强的朗道能级的塞曼分裂效应的模型中找到了很好的一致性。此外，我们观察到，当电场施加到导体上时，它会加热电荷载流子。已经证明，施加到具有离散电子光谱的导体上的电场会产生不平衡的电子分布，这不能用温度来描述。这样的电子分布显着改变了磁场中电子的电导率，并迫使它们进入零差分电阻状态。最重要的是，结果表明，总的来说，具有离散频谱的系统中的有效过热明显强于在相同输入功率下能量水平连续且均匀分布的系统中的过热。在最后一部分中，我们观察了硅MOSFET中的非线性行为。在不同温度，电子密度和微波功率的情况下，对在硅表面上由窄间隙隔开的二维电子系统之间的边界处的微波辐射的整流进行了测量。提出了一种理论，该理论将整流归因于微波辐射在两种异种2D金属之间的边界上引起的强烈局部过热而导致的热电响应。

著录项

  • 作者

    Romero Kalmanovitz, Natalia.;

  • 作者单位

    City University of New York.;

  • 授予单位 City University of New York.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 99 p.
  • 总页数 99
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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