• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Low noise amplifiers in BAE Systems' Gallium Nitride MMIC technology.
【24h】

Low noise amplifiers in BAE Systems' Gallium Nitride MMIC technology.

机译：BAE Systems的氮化镓MMIC技术中的低噪声放大器。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology has received a large amount of attention in recent years for use in solid state power amplifiers (PAs). Although the initial focus of GaN MMIC development focused on high power transmit applications, the benefits of GaN in receiver applications have spurred interest in low noise amplifier (LNA) development. This thesis explores the use of BAE Systems' GaN MMIC technology, still in the development and optimization phase, in low noise applications. Two MMIC LNAs were designed, fabricated, and tested. The first MMIC fabricated was a common source LNA utilizing a single 0.35microm gate, 2x150microm finger dual field-plated device biased at 100mA/mm and 30V. This LNA had a noise figure less than 3dB, gain of 10 to 11dB, and an output third order intercept point (O1P3) of greater than 25dBm across the targeted frequency band. The second MMIC fabricated was a distributed LNA utilizing four 0.20microm gate 2x100microm dual field-plated devices biased at 100mA/mm and 15V. This LNA had a noise figure of from 3.1 to 6.7dB, nominal gain of 9dB, 2dB bandwidth from 1.7 to 19.5 GHz, and OIP3 above 25dBm across the targeted frequency band. The performance of these circuits was measured under a variety of bias conditions to better understand the performance and DC power consumption tradeoffs. The MMICs were compared to several other published GaN LNAs.
机译：近年来，氮化镓（GaN）高电子迁移率晶体管（HEMT）技术在固态功率放大器（PA）中的使用引起了广泛的关注。尽管GaN MMIC开发的最初重点是高功率发射应用，但GaN在接收器应用中的优势吸引了人们对低噪声放大器（LNA）开发的兴趣。本文探讨了仍处于开发和优化阶段的BAE Systems的GaN MMIC技术在低噪声应用中的使用。设计，制造和测试了两个MMIC LNA。制造的第一个MMIC是使用单个0.35微米栅极，2x150微米指形双场镀膜器件的公共源LNA，偏置器件以100mA / mm和30V偏置。该LNA的噪声系数小于3dB，增益为10至11dB，在目标频段上的输出三阶截取点（O1P3）大于25dBm。制造的第二个MMIC是分布式LNA，它利用四个偏置电压为100mA / mm和15V的0.20μm栅极2x100μm双场电镀器件。该LNA的噪声系数在3.1至6.7dB之间，标称增益为9dB，在1.7至19.5 GHz范围内具有2dB带宽，在目标频段上的OIP3高于25dBm。在各种偏置条件下测量了这些电路的性能，以更好地了解性能和直流功耗的折衷。将MMIC与其他几种已发布的GaN LNA进行了比较。

著录项

  • 作者

    Sliech, Kevin W.;

  • 作者单位

    University of Massachusetts Lowell.;

  • 授予单位 University of Massachusetts Lowell.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.S.
  • 年度 2009
  • 页码 114 p.
  • 总页数 114
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号