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Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits.

机译:通过设计技术对硅锗异质结双极晶体管和数字逻辑电路进行硬度保证测试和辐射硬化。

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摘要

Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost.;Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.
机译:碳氢化合物勘探,全球导航卫星系统,计算机断层扫描和飞机航空电子设备只是其中一些要求系统在环境温度,压力或辐射水平不在军事规格范围内运行的应用的示例。这些应用中使用的电子设备被称为“极端环境电子设备”。由于工艺修改和使用奇异衬底材料导致的成本增加,只有少数半导体代工厂专门生产极端环境电子产品。这些电子系统在极端环境中的保护可以通过将敏感电路封装在受控环境中来实现,该电路可提供与恶劣环境的隔离,但通常会付出很大的成本和性能损失。与传统方法大相径庭的是,系统设计人员已开始将具有内置缓解技术的商用现货技术平台用于极端环境应用。这种方法同时利用了技术性能的最新水平,同时大大节省了项目成本。硅锗是一种这样的商业技术平台,由于其在低温下的出色性能,其在潜在的极端环境应用中具有部署潜力,对辐射引起的退化具有显着的耐受性,并且与基于硅的制造实现了整体集成。本文研究了硅锗技术的辐射响应,并提出了基于晶体管级布局的新型技术,以提高HBT数字逻辑的辐射耐受性。

著录项

  • 作者

    Sutton, Akil K.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.;Chemistry Nuclear.;Engineering Nuclear.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 266 p.
  • 总页数 266
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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