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Templated synthesis of magnetic nanowires by electrochemical deposition.

机译:通过电化学沉积模板化合成磁性纳米线。

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摘要

There has been much interest in magnetic nanowire because of its perpendicular magnetic anisotropy, enhanced coercivity and large giant magnetoresistance (GMR). So, it is supposed that magnetic nanowires have potential applications to ultra-high-density magnetic recording and high sensitive sensors. Many kinds of methods have been used for the growth of nanowires with diameter ranging from 10nm to few hundred nanometers, however, template assisted electrochemical deposition exhibits many advantages on the growth of metal nanowires. In this work, two-step anodic alumina templates were fabricated for the growth of magnetic nanowires. These templates provided platforms for achieving uniform nanowires. Moreover, nano-imprinting was introduced for the formation of nanopore arrays with long-range order. A new Si3N4 thin film nano-stamp was developed, which is much simpler and more cost-effective. Also, nanopore patterning alignment was successfully achieved without using e-beam lithography. This would provide the opportunity to electrically address each single nanostructure in arrays with high density. The growth of magnetic nanowires was done by eletrodeposition, which included single element Co and Co/Cu multilayered nanowires. Their structures, magnetic and transport properties have been investigated, and were tailored by optimizing the fabrication process. It was shown that the composition of magnetic nanowires was a function of deposition potential. And the structure of electrodeposited Co was affected by the pH of electrolyte and growth rate. GMR and spin transfer torque have been performed on the Co/Cu nanowires. A GMR of 22% was achieved in Co/Cu nanowires. Different magnetoresistance behaviors were observed, which were related to the magnetic anisotropy of the nanowires. It was the first time to detect spin transfer torque in the nanowires with hundreds of Co/Cu bilayers. The switching current density was about 107A/cm2. This process demonstrated the fabrication of nanowire GMR sensor arrays, which have potential applications to HDD read sensors and MRAM.
机译:由于磁性纳米线的垂直磁各向异性,增强的矫顽力和大的巨磁阻(GMR),引起了人们的极大兴趣。因此,可以认为磁性纳米线在超高密度磁记录和高灵敏度传感器中具有潜在的应用。已经使用了多种方法来生长直径范围从10nm到几百纳米的纳米线,但是,模板辅助电化学沉积在金属纳米线的生长上显示出许多优点。在这项工作中,制造了两步阳极氧化铝模板,用于磁性纳米线的生长。这些模板提供了实现均匀纳米线的平台。此外,引入了纳米压印以形成具有长距离顺序的纳米孔阵列。开发了一种新的Si3N4薄膜纳米印章,该印章更加简单且更具成本效益。同样,无需使用电子束光刻技术即可成功实现纳米孔图案对准。这将提供机会以高密度电寻址阵列中的每个单个纳米结构。磁性纳米线的生长通过电沉积完成,其中包括单元素Co和Co / Cu多层纳米线。研究了它们的结构,磁性和传输性能,并通过优化制造工艺对其进行了定制。结果表明,磁性纳米线的组成是沉积电位的函数。电沉积Co的结构受到电解液pH值和生长速率的影响。已经在Co / Cu纳米线上执行了GMR和自旋传递扭矩。 Co / Cu纳米线的GMR为22%。观察到不同的磁阻行为,这与纳米线的磁各向异性有关。这是第一次在具有数百个Co / Cu双层的纳米线中检测自旋传递扭矩。开关电流密度约为107A / cm2。此过程演示了纳米线GMR传感器阵列的制造,该阵列可应用于HDD读取传感器和MRAM。

著录项

  • 作者

    Tan, Liwen.;

  • 作者单位

    University of Minnesota.;

  • 授予单位 University of Minnesota.;
  • 学科 Engineering General.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 183 p.
  • 总页数 183
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程基础科学;工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:38:30

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