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>利用掃描穿隧顯微鏡探討在硒化銦上未氧化表面和氧化表面之介面接合處的電子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
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利用掃描穿隧顯微鏡探討在硒化銦上未氧化表面和氧化表面之介面接合處的電子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
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机译:利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction