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Pulsed laser ablation and micromachining of 4H and 6H silicon carbide wafers for high-temperature MEMS sensors.

机译：用于高温MEMS传感器的4H和6H碳化硅晶片的脉冲激光烧蚀和微加工。

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This thesis provides a scientific investigation of the ablation behavior of single crystal 4H-SiC and 6H-SiC to improve the manufacturability and high-temperature performance of SiC based MEMS pressure sensors using laser applications. The ablation characteristics of both the polytypes were studied using pulsed lasers and micromachining results were presented. The study shows the possibility of these devices capable of operating in harsh environments.

机译：本文对单晶4H-SiC和6H-SiC的烧蚀行为进行了科学的研究，以提高基于SiC的MEMS压力传感器在激光应用中的可制造性和高温性能。使用脉冲激光研究了两种多型体的消融特性，并给出了微加工结果。研究表明，这些设备有可能在恶劣的环境中运行。

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作者
Gupta, Saurabh.;
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作者单位

Iowa State University.;

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授予单位 Iowa State University.;
学科 Engineering Mechanical.
学位 M.S.
年度 2008
页码 112 p.
总页数 112
原文格式 PDF
正文语种 eng
中图分类机械、仪表工业;
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3. Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablation of titanium in low-pressure CH4 and C2H2 atmospheres [J] . DAnna E, Fernandez M, Leggieri G, The European physical journal. Applied physics . 2004,第2期

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4. DYNAMIC ELECTROMECHANICAL RESPONSE OF 4H AND 6H SINGLE CRYSTAL SILICON CARBIDE [C] . Leslie Lamberson International conference on advanced ceramics and composites . 2015

机译：4H和6H单晶碳化硅的动态机电响应
5. Femtosecond pulsed laser ablation and patterning of 3C-silicon carbide films on silicon substrates for MEMS fabrication. [D] . Dong, Yuanyuan. 2004

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6. Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review [O] . Xiaorui Guo, Qian Xun, Zuxin Li, 2019

机译：高温功率电子器件用碳化硅转换器和MEMS器件的评论
7. Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors [O] . Gupta, Saurabh 2008

机译：用于高温MEMS传感器的4H和6H SiC晶片的脉冲激光烧蚀和微加工

Pulsed laser ablation and micromachining of 4H and 6H silicon carbide wafers for high-temperature MEMS sensors.

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