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Design of High Power Wideband Microwave Frequency GaN HEMT Frequency Doublers Using Reflector Networks and Filtering

机译：使用反射网络和滤波设计大功率宽带微波频率GaN HEMT频率倍增

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作者
Wong, Claudia Wing Yin.;
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作者单位

University of California Davis.;

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授予单位 University of California Davis.;
学科
学位 M.S.
年度 2012
页码 182 p.
总页数 182
原文格式 PDF
正文语种 eng
中图分类 AAI1519818;
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专利

1. AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme [J] . Younkyu CHUNG, Kevin M.K.H. LEONG, Tatsuo ITOH IEICE Transactions on Electronics . 2003,第8期

机译：具有新型基本频率反射器方案的AlGaN / GaN HEMT X波段倍频器
2. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [J] . Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Electron Devices Society, IEE . 2017,第3期

机译：通过低频S参数测量和基于TCAD的物理设备仿真识别微波功率AlGaN / GaN HEMT中的GaN缓冲阱
3. Ultra-wideband GaN HEMT power amplifier with practical mixed lumped approach employing real-frequency technique [J] . Wen Jun Lim, Narendra Kumar, Siddik Yarman, IEICE Electronics Express . 2017,第13期

机译：采用实频技术的实用混合集总方法的超宽带GaN HEMT功率放大器
4. High power, wideband frequency doubler design using AlGaN/GaN HEMTs and filtering [C] . Wong Claudia, Yuk Kelvin, Branner G. R., 2011 41st European Microwave Conference . 2011

机译：使用AlGaN / GaN HEMT和滤波的高功率宽带倍频器设计
5. Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs [D] . Tan, Jeffrey Lee. 2017

机译：使用AlGaN / GaN HEMT的大功率，宽带微波F类功率放大器的设计
6. Wideband dynamic microwave frequency identification system using a low-power ultracompact silicon photonic chip [O] . Maurizio Burla, Xu Wang, Ming Li, -1

机译：使用低功率超紧凑硅光子芯片的宽带动态微波频率识别系统
7. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [O] . Subramani, Nandha Kumar, Couvidat, Julien, Hajjar, Ahmad Al, 2017

机译：通过低频s参数测量和基于TCaD的物理器件仿真识别微波功率alGaN / GaN HEmT中的GaN缓冲阱
8. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization [R] . Shah, P. B., Qiu, J. X. 2011

机译：用于射频（RF）功率和增益优化的氮化镓（GaN）高电子迁移率晶体管（HEmT）的物理分析

Design of High Power Wideband Microwave Frequency GaN HEMT Frequency Doublers Using Reflector Networks and Filtering

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