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Pulsed Laser Deposition and Electrical Properties of Zinc Selenide Based Thin Film Structures for Integration with Mid-infrared Applications

机译：用于中红外应用的硒化锌基薄膜结构的脉冲激光沉积和电性能

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摘要

Thin films of chlorine (Cl) and copper (Cu) doped zinc selenide (Cl:ZnSe and Cu:ZnSe) were fabricated by pulsed laser deposition (PLD) with the goal of enabling a multilayered semiconductor structure for a mid-infrared (mid-IR) electrically excited laser. Doping of ZnSe is achieved by varying the mass ratio of zinc chloride (ZnCl2) or copper selenide (Cu2Se) to ZnSe precursors in starting pressed powder targets. Appropriate adjustment of the fraction of dopant precursor in the mixtures allows for the control of the dopant concentration, ND--N A for ND NA (or NA-ND for N A ND) in the thin films, where ND is the donor concentration and N A is the acceptor concentration. PLD is used to ablate the Cl:ZnSe or Cu:ZnSe targets, to produce thin films on gallium arsenide (GaAs) substrates. Impedance spectroscopy allows current-voltage and capacitance-voltage (C-V) characterization. Specifically Mott-Schottky measurements determine ND-NA (or N A-ND) of the fabricated thin film samples with comparisons to the nominal dopant concentration of the targets. The Mott-Schottky, 1/C2 vs. V, measurements for determining ND-NA were calibrated against well-characterized silicon wafers with known values of N D. The goal of this project was to demonstrate a reliable method for controlling the dopant concentration in PLD-deposited Cl:ZnSe and Cu:ZnSe thin films. The results obtained allows for the fabrication of Cl:ZnSe and Cu:ZnSe thin films with known ND-N A for use in a mid-IR electrically-excited laser devices under development in our research group.
机译：通过脉冲激光沉积（PLD）制备了掺有氯（Cl）和铜（Cu）的硒化锌锌（Cl：ZnSe和Cu：ZnSe）薄膜，目的是实现用于中红外（mid- IR）电激发激光。通过改变开始压制粉末靶材中氯化锌（ZnCl2）或硒化铜（Cu2Se）与ZnSe前体的质量比来实现ZnSe的掺杂。适当调整混合物中掺杂剂前体的比例可以控制掺杂剂浓度，即薄膜中ND NA的ND-NA（或NA ND的NA-ND），其中ND为施主浓度，NA为受体浓度。 PLD用于烧蚀Cl：ZnSe或Cu：ZnSe靶，以在砷化镓（GaAs）衬底上产生薄膜。阻抗谱可以表征电流-电压和电容-电压（C-V）。具体而言，莫特-肖特基（Mott-Schottky）测量通过与目标的标称掺杂剂浓度进行比较来确定所制造的薄膜样品的ND-NA（或N A-ND）。针对具有已知N D值的特性良好的硅晶片，对用于确定ND-NA的Mott-Schottky / 1 / C2测量进行了校准。该项目的目的是证明一种可靠的方法来控制N-NA PLD沉积的Cl：ZnSe和Cu：ZnSe薄膜。所获得的结果允许制造具有已知ND-NA的Cl：ZnSe和Cu：ZnSe薄膜，用于我们研究小组正在开发的中红外电激发激光设备。

著录项

  • 作者

    Rhoades, Matthew W.;

  • 作者单位

    The University of Alabama at Birmingham.;

  • 授予单位 The University of Alabama at Birmingham.;
  • 学科 Physics.;Applied physics.;Materials science.
  • 学位 M.S.
  • 年度 2018
  • 页码 62 p.
  • 总页数 62
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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