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首页> 中文期刊> 《物理学报》 >铜箔上生长的六角氮化硼薄膜的扫描隧道显微镜研究∗

铜箔上生长的六角氮化硼薄膜的扫描隧道显微镜研究∗

         
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摘要

Analogous to graphite, hexagonal boron nitride (h-BN) has a layered structure composed of boron and nitrogen atoms that are alternatively bond to each other in a honeycomb array. As the layers are held together by weak van der Waals forces, h-BN thin films can be grown on surfaces of various metal crystals in a layer-by-layer manner, which is again similar to graphene sheets and thus attracts a lot of research interests. In this work, scanning tunneling microscope and spectroscope (STM and STS) were applied to the study of an h-BN thin film with a thickness of about 10 nm grown on Cu foil by means of chemical vapor deposition. X-ray diffraction from the Cu foil shows only one strong peak of Cu(200) in the angle range of 40◦–60◦, indicating that the Cu foil is mainly Cu(100). After sufficient annealing in an UHV chamber, the h-BN film sample is transferred to a cooling stage (77 K) for STM/STS measurement. Its high quality is confirmed by a large-scale STM scan that shows an atomically flat topography. A series of dI/dV data taken within varied energy windows all exhibit similar U shapes but with different bottom widths that monotonously decrease with the sweeping energy window. The d I/d V curve taken in the energy window of [−1 V,+1 V] even shows no energy gap in spite that h-BN film is insulating with a quite large energy gap of around 6 eV, as observed in a large-energy-window d I/d V curve (from −5 V to +5 V). These results indicate that the STM images reflect the spatial distribution of tunneling barriers between Cu(100) substrate and STM tip, rather than the local density of states of the h-BN surface. At high sample biases (from 4 V to 1 V), STM images exhibit an electronic modulation pattern with short range order. The modulation pattern displays a substructure in low-bias STM images (less than 100 mV), which finally turns to the (1×1) lattice of h-BN surface when the sample bias is extremely lowered to 3 mV. It is found that the electronic modulation pattern cannot be fully reproduced by superimposing hexagonal BN lattice on tetragonal Cu(100) lattice, no matter what their relative in-plane crystal orientation is. This implies that the electronic modulation pattern in the STM images is not a Morié pattern due to lattice mismatch. We speculate that it may originate from spatial distribution of tunneling barrier induced by adsorption of H, B and/or N atoms on the Cu(100) surface in the CVD growth process.

著录项

  • 来源
    《物理学报》 |2016年第11期|116801-1-116801-8|共8页
  • 作者

    徐丹; 贾金锋; 殷俊; 孙昊桦; 王观勇; 钱冬; 管丹丹; 李耀义; 郭万林; 刘灿华;

  • 作者单位

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    人工微结构科学与技术协同创新中心;

    南京 210093;

    南京航空航天大学航空宇航学院;

    机械结构力学及控制国家重点实验室;

    纳智能材料器件教育部重点实验室;

    南京 210016;

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    人工微结构科学与技术协同创新中心;

    南京 210093;

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    人工微结构科学与技术协同创新中心;

    南京 210093;

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    人工微结构科学与技术协同创新中心;

    南京 210093;

    南京航空航天大学航空宇航学院;

    机械结构力学及控制国家重点实验室;

    纳智能材料器件教育部重点实验室;

    南京 210016;

    上海交通大学物理与天文系;

    人工结构及量子调控教育部重点实验室;

    上海 200240;

    人工微结构科学与技术协同创新中心;

    南京 210093;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类
  • 关键词

    氮化硼; 隧穿势垒; 扫描隧道显微镜;

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