The Ti/4H-SiC Schottky barrier diodes (SBDs) were irradiated at room temperature with 60 Co gamma-ray source,1 MeV electrons and neutrons, and 0V and -30 V bias voltage were applied to the diodes during gamma-ray and electron radiation. The meaurement results show that - 30 V radiation bias voltage has no influence on the radiation effect of the diodes. After 1 Mrad(Si) gamma-ray and 1 × 1013 n/cm2 neutron radiation respectively, the Schottky barrier height of the diodes basically remain the same values. After an electron dose of 3.43 × 1014 e/cm2, Schottky barrier height of the diodes slightly decreased, which was caused by ionizing damage of high energy electron, and recovered completely after annealing at room temperture. After gamma-ray and electron radiation, the reverse current of Ti/4H-SiC SBD had no obviously degration. The on-state resistance of the diodes increased after electron and neutron radiaiton.%本文采用γ射线、高能电子和中子对Ti/4H-SiC肖特基势垒二极管(SBD)的抗辐射特性进行了研究.研究发现对于γ射线和1 MeV电子辐照,-30 V辐照偏压对器件的辐照效应没有明显的影响.经过1 Mrad(si)的γ射线或者1×1013 n/cm2的中子辐照后,Ti/4H-SiC肖特基接触都没有明显退化;经过3.43×1014e/cm2的1 MeV电子辐照后Ti/4H-SiC的势垒高度比辐照前轻微下降,这是由于高能电子引入的电离损伤造成的,且可以在常温下退火恢复.分别经过1 Mrad(Si)的γ射线和3.43×1014 e/cm2的电子辐照后,器件反向电流的变化都比较轻微,显示了良好的抗辐射特性.实验同时还发现电子和中子辐照会造成器件串联电阻增加.
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