采用双槽电化学腐蚀法制备多孔硅层,然后在多孔硅表面沉积形成金属电极,制备出M/PS/Si微结构.利用SEM分析多孔硅的表面形貌,通过测试其I-V特性分析M/PS/Si微结构的电学特性.结果表明:由Pt做电极形成的M/PS/Si结构,表现出非整流特性.M/PS/Si结构的I-V曲线由线性区和非线性区组成,多孔硅孔隙率越高的M/PS/Si结构的I-V特性曲线线性区越宽.由Cu做电极形成的M/PS/Si结构,表现出整流特性.其整流比随多孔硅孔隙率增加而减小.%In this paper, porous silicon (PS) was prepared in a double-tank cell using the electrochemical corrosion method.Subsequently, different metal films for electrical contacts were deposited on the PS samples by magnetron sputtering to form the M/PS/Si microstructure.The PS surface morphology was characterized by SEM.The electrical properties of the M/PS/Si microstructure were studied through the Ⅰ-Ⅴ characteristic tests.It was shown that Pt can form ohmic contact with PS.The Ⅰ-Ⅴ characteristic curves were formed from two parts:linear part and nonlinear part.However, Cu formed Schottky contact with PS and its Ⅰ-Ⅴ curves showed rectification characteristics.The rectification ratio decreased when the porosity of the PS increased.
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