使用射频磁控溅射,在正方形石英衬底上沉积透明导电掺Al的ZnO(AZO)和Si共掺AZO(AZO∶Si)薄膜.系统研究了靶-基底距离(Dst)和Si共掺对AZO薄膜电学、光学性质的影响.电阻率、载流子浓度和迁移率都强烈地依赖于靶一基底距离,随着靶-基底距离的减少,载流子浓度和迁移率都有显著的增加,电导率也随之提高.在靶-基底距离为4.5 cm处,得到最低电阻率4.94×10-4Ω·cm,此时的载流子浓度和迁移率分别是3.75×1020 cm-3和33.7 cm2· V-1·s-1.X射线光电子能谱(XPS)、X射线衍射(XRD)和边界散射模型被用于分析载流子浓度、迁移率和靶一基底距离的关系.透射谱显示,在可见-近红外范围内所有样品均有大于93%的平均透射率,同时随着靶基距离的减少,吸收边蓝移.AZO:Si表现出可与AZO相比拟的高电导和高透射光学特性,但在热湿环境中却有着更好的电阻稳定性,这在实际使用中很有意义.%Transparent conductive Al-doped ZnO(AZO)and Si-codoped AzO(AZO:Si)films were deposited on square quartz substrates by radio frequency(RF)magnetron sputtering.The effect of distance between the substrate and target(Dst)and the effect of co-doping Si on the electricaI and opticaI properties of the AZO films were systematically investigated.The resistivity,carrier concentration,and mobility were found to be strongly dependent on the Dst values.With a decrease in Dst,the carrier concentration and mobility increased significantly,which resulted in improved conductivity.The lowest resistivity of 4.94× 10-4Ω·cm was obtained at a Dst of 4.5 cm,and this was associated with a carrier concentration of 3.75×1020cm-3 and a mobility of 33.7 cm2·V-1·s-1.X-ray photoelectron spectroscopy(XPS),X-ray diffraction(XRD)spectroscopy,and grain boundary scattering models were used to analyze the relationship between the carrier concentration and the mobility at dliferent deposition(Dst)values.Transmittance spectra showed an average transmittance of＞93%in the visible-near infrared range for all the samples and a blue shift of the absorption edge with a decrease in Dst.AZO:Si films had high-conductance and high-transmittance optical properties compared with AZO films, and they had better resistivity stability than the AZO films when exposed to a hot and damp atmosphere, which is practically meaningful.
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