由分子束外延生长的GaSb基的InAs／GaSb超晶格材料具有良好的均匀性，其在制作红外焦平面探测器方面有独特的优势。分别采用生长中断和表面迁移率增强的分子束外延法在GaSb衬底上生长了中波段InAs／GaSb超晶格红外探测器材料，对比表明对于中波超晶格材料，生长中断法优于表面迁移率增强法。利用标准工艺制作了中波红外PIN单元探测器，并制备了320×256的焦平面探测器芯片。%The GaSb-based InAs/GaSb superlattices grown by molecular beam epitaxy ( MBE ) with high uniformity of materials has obvious advantages in the fabrication of infrared focal plane array ( FPA) detectors.By the growth interrupt and the surface mobility enhancement methods of molecular beam epi-taxial growth , mid-wavelength InAs/GaSb infrared superlattices material for detectors are grown on GaSb substrate respectively .The comparison shows that for mid-wavelength superlattices materials , the growth interrupt method is better than the surface mobility enhancement method .The PIN photodiodes is made , the focal plane array of 320 ×256 pixel is fabricated .
展开▼
