Electronic Transport in MoSe_(2) FETs Modified by Latent Tracks Created by Swift Heavy Ion Irradiation

Zhang Shengxia; Liu Jie; Zeng Jian; Hu Peipei; Xu Lijun; Li Zongzheng; Liu Li; Zhai Pengfei; Duan Jinglai

首页> 中文期刊> 《近代物理研究所和兰州重离子加速器实验室年报：英文版》 >Electronic Transport in MoSe_(2) FETs Modified by Latent Tracks Created by Swift Heavy Ion Irradiation

Electronic Transport in MoSe_(2) FETs Modified by Latent Tracks Created by Swift Heavy Ion Irradiation

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摘要

Unique characteristics of transition metal dichalcogenides(TMDCs)such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic.

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来源
《近代物理研究所和兰州重离子加速器实验室年报：英文版》 |2019年第1期|103-104|共2页
作者
Zhang Shengxia; Liu Jie; Zeng Jian; Hu Peipei; Xu Lijun; Li Zongzheng; Liu Li; Zhai Pengfei; Duan Jinglai;
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不详;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
MoSe_(2); optoelectronic; tunable;

机译：MOSE_（2）;光电子;可调;

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Electronic Transport in MoSe_(2) FETs Modified by Latent Tracks Created by Swift Heavy Ion Irradiation

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