采用直流磁控溅射在SiO2/n-Si(111)衬底上沉积了Al薄膜,经过光刻、刻蚀形成源漏极,再采用射频磁控溅射沉积ZnO薄膜作为有源层,成功制备了底栅顶接触结构的ZnO-TFT,Al膜厚135nm,ZnO膜厚110nm.实验结果表明,薄膜晶体管展示出明显的栅控特性以及饱和特性,ZnO薄膜沿C轴择优取向生长,且在可见光波长区域的平均透过率超过85％.%A1 thin film was grown on SiO2/n-Si( 111 )substrate by the method of the DC magnetron sputtering,and it became the source and drain by photolithography and etching. Then, ZnO thin film was grown by the RF magnetron sputtering. Finally a bottom-gate-type ZnO-TFT was fabricated successfully. The measurements showed that the device had an obvious field effect performance and a favorable saturation characteristic, the ZnO thin film exhibited a preferred orientation along the c-axis,and the average transmittance exceeded 85% in the visible light.
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