利用氨挥发诱导法在CdSe/TiO2纳米管阵列表面负载一层NixCo3-xO4.采用SEM、XRD、XPS、UV-Vis对样品进行表征,通过线性扫描伏安法测定光阳极的释氧电势来评价其光电水氧化活性.结果表明:表面NixCo3-xO4是尖晶石结构；相对于CdSe/TiO2纳米管阵列光阳极,NixCo3-xO4/CdSe/TiO2光阳极能将光电氧化水的过电势降低430 mV.Ni离子的引入使得NixCo3-xO4表面富含三价阳离子(Ni3+,Co3+),从而促进CdSe/TiO2光阳极光电水氧化的进行.%CdSe/TiO2 nanotube array (TiO2NTA) film was modified by NixCo3-xO4 through the method of ammoniaevaporation induction growth.The films were characterized by X-ray diffraction,field emission scanning electron microscopy,energy dispersive spectroscopy,X-ray photoelectron spectroscopy and UV-Vis diffuse reflectance spectroscopy.To characterize the photoanodes activity of photoelectrochemical oxidation of water,the chopped linear sweep voltammetry was performed in a three-electrode system under simulated solar irradiation.The results show that CdSe/TiO2NTA is covered by a thin layer of NixCo3-xO4 with the spinel structure in which Ni and Co are both in divalent and trivalent states.The modification of NixCo3-xO4 on the CdSe/TiO2NTA can lower the overpotential of water oxidation by about 43O mV compared with the CdSe/TiO2NTA.The introduction of Ni into the structure of Co3O4 leads to the surface enhancement of trivalent cations (Ni3+ and Co3+) and consequently facilitates the oxidation of water.
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