In 4-mask manufacturing process of the thin film transistor (TFT) liquid crystal display (LCD), multi-layer etch is a very critical process, because metal remain defect would happen after multi-layer etch, which will influence on the next insulator layer deposition, and induce layer broken.Conventional method for eliminating metal remain is to adjust multilayer etch process, but there is no fundamental improvement In this paper, the influence of data line etch time on metal remain after multi-layer etch has been researched, and it is found that metal remain could be fundamentally eliminated by adjusting data line etch time, and also could keep data line width in control.%在TFT-LCD阵列的四次掩模技术中,复合层刻蚀是非常难控制的一道工序,最突出的问题是在复合层刻蚀后信号线的两边有金属残留,金属残留会对之后的绝缘层产生影响,导致断层等不良.调整复合层刻蚀工艺是目前解决金属残留问题的通用方法,但是都没有根本地解决这个问题.文章通过研究信号线刻蚀时间对复合层刻蚀后金属残留的影响,认为通过调整信号线的刻蚀时间能够根本解决复合层刻蚀后金属残留的问题,并且不会使金属线线宽超出控制范围.
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