Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature

著录项

• 来源
  《中国稀土学报：英文版》 |2006年第z1期|91-93|共3页
• 作者

  Liu Lili Li Yangxian Ma Qiaoyun Chen Guifeng Sun Yong Yang Shuai;

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• 作者单位

  School of Material Science and Engineering;

  Hebei University of Technology;

  Tianjin 300130;

  China School of Material Science and Engineering;

  Hebei University of Technology;

  Tianjin 300130;

  China School of Material Science and Engineering;

  Hebei University of Technology;

  Tianjin 300130;

  China School of Material Science and Engineering;

  Hebei University of Technology;

  Tianjin 300130;

  China School of Material Science and Engineering;

  Hebei University of Technology;

  Tianjin 300130;

  China School of Material Science and Engineering;

  Hebei University of Technology;

  Tianjin 300130;

  China;

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• 原文格式 PDF
• 正文语种 chi
• 中图分类 杂质和缺陷;
• 关键词

  nitrogen-doped; Czochralski; silicon; (NCZ-Si); neutron; irradiation; oxygen; precipitation; FTIR;