A high mobility C_(60) field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

周建林; 于军胜; 于欣格; 蔡欣洋

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A high mobility C_(60) field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

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摘要

C_(60)field-effect transistor (OFET) with a mobility as high as 5.17 cm 2 /V·s is fabricated.In our experiment,an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared.The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode.By analysing the C_(60) film with atomic force microscopy and X-ray diffraction techniques,it is shown that the pentacene passivation layer can contribute to C_(60) film growth with the large grain size and significantly improve crystallinity.Moreover,the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C_(60) film efficiently.

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《中国物理：英文版》 |2012年第2期|498-503|共6页
作者
周建林; 于军胜; 于欣格; 蔡欣洋;
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作者单位

State Key Laboratory of Electronic Thin Films and Integrated Devices;

School of Optoelectronic Information;

University of Electronic Science and Technology of China;

Chengdu 610054;

China;

Department of Electronic Engineering;

College of Communication and Electronics;

Chongqing University;

Chongqing 400044;

China;

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原文格式 PDF
正文语种 chi
中图分类场效应器件;
关键词
C60薄膜; 场效应晶体管; 双层电极; 钝化层; 高流动性; 超薄; 聚甲基丙烯酸甲酯; 电子迁移率;

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A high mobility C_(60) field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

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