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首页> 中文期刊> 《中国物理：英文版》 >Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

         
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AlGaN/GaN heterojunction field-effect transistors(HFETs)with p-GaN cap layer are developed for normally-off operation,in which an in-situ grown AlN layer is utilized as the gate insulator.Compared with the SiNxgate insulator,the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region,which helps to positively shift the threshold voltage.In addition,the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage.Owing to the introduction of AlN layer,normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized.Furthermore,the field-effect mobility is approximately 1500 cm^(2)·V^(-1)·s^(-1)in the 2DEG channel,implying a good device performance.

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