The School of Opto-Electronic Engineering;
Changchun University of Science and Technology;
Changchun 130022;
China;
Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument;
Beijing Information Science&Technology University;
Beijing 100192;
China;
InAs/GaSb type-Ⅱsuperlattice; molecular beam epitaxy; interface; mid-wave infrared;