Van der Waals heterostructures based on the two-dimensional(2D)semiconductor materials have attracted increasing attention due to their attractive properties.In this work,we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe_(2)/MoS_(2)heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse.Under bias,the phototransistor exhibits high responsivity of up to 1.42×103A/W,and ultrahigh specific detectivity of up to 1.39×1015cm·Hz^(1/2)·W^(-1).Moreover,it can also operate under zero bias with remarkable responsivity of 10.2 A/W,relatively high specific detectivity of 1.43×1014cm·Hz^(1/2)·W^(-1),ultralow dark current of 1.22 f A,and high on/off ratio of above 105.These results should be attributed to the fact that the vertical HfSe_(2)/MoS_(2)heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity.Therefore,the heterostructure provides a promising candidate for next generation high performance phototransistors.
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机译：Efeitos do tratamento da ClasseIIdivisão1em pacientes dolicofaciais tratados segundo a Terapia Bioprogressiva（aEB cervical e arco base inferior），comênfasenocontrole vertical对II类1级高角度患者的治疗效果根据Bioprogressive疗法（宫颈头带和下部实用拱门），重点是垂直控制
