Molecular beam epitaxy growth of quantum devices

何珂

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Molecular beam epitaxy growth of quantum devices

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摘要

The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment.Here,I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum.The molecular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way.

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《中国物理：英文版》 |2022年第12期|430-433|共4页
作者
何珂;
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作者单位

State Key Laboratory of Low-Dimensional Quantum Physics;

Department of Physics;

Tsinghua University;

Beijing 100084;

China;

Frontier Science Center for Quantum Information;

Beijing 100084;

China;

Beijing Institute of Quantum Information Science;

Beijing 100193;

China;

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原文格式 PDF
正文语种 chi
中图分类量子论;
关键词
molecular beam epitaxy; fabrication; ultrahigh vacuum; quantum computation;

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Molecular beam epitaxy growth of quantum devices

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