First-principles investigations of proton generation inα-quartz

乐云亮; 宋宇; 左旭

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First-principles investigations of proton generation inα-quartz

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Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in α-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen(H_2) is present, the proton generation can be enhanced by cracking the H_2 molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doublyhydrogenated defects. In particular, a fully passivated E_2' center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices.

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《中国物理：英文版》 |2018年第3期|368-375|共8页
作者
乐云亮; 宋宇; 左旭;
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作者单位

College of Electronic Information and Optical Engineering;

Nankal University;

Tianjin 300071;

China;

Microsystem and Terahertz Research Center;

China Academy of Engineering Physics;

Chengdu 610200;

China;

Institute of Electronic Engineering;

China Academy of Engineering Physics;

Mianyang 621999;

China;

Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology;

Nankai University;

Tianjin 300071;

China;

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原文格式 PDF
正文语种 chi
中图分类 O572.341;P618.510.4;
关键词
质子; 石英; 二氧化物; 可靠性; 异构体; 非结晶; 分子; 显微镜;

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First-principles investigations of proton generation inα-quartz

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