In this paper,a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology.We find that different from the case in the pMOSFET,the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking.The influence of the substrate process on the bipolar effect is also studied in the pMOSFET.We find that the bipolar effect can be effectively mitigated by a buried deep P+-well layer and can be removed by a buried SO 2 layer.
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机译：maudsley双相情感障碍项目：洞察sobre o papeldocórtexpré-frontal em pacientes com transtorno de humor bipolar tipo I proyecto maudsley para Trastorno Bipolar：insights sobre el roldelcórtexprefrontalen casos de disturbio bipolar I maudsley Bipolar Disorder project：insights into前额叶皮质在双相情感障碍中的作用I
