4.3 THz quantum-well photodetectors with high detection sensitivity

张真真; 符张龙; 郭旭光; 曹俊诚

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4.3 THz quantum-well photodetectors with high detection sensitivity

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We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector(QWP) device with a peak response frequency of 4.3 THz. The negative differential resistance(NDR) phenomenon is found in the dark current–voltage(I–V) curve in the current sweeping measurement mode, from which the breakdown voltage is determined. The photocurrent spectra and blackbody current responsivities at different voltages are measured. Based on the experimental data, the peak responsivity of 0.3 A/W(at 0.15 V, 8 K) is derived, and the detection sensitivity is higher than 10^(11) Jones,which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers. We attribute the high detection performance of the device to the small ohmic contact resistance of ～ 2 ? and the big breakdown bias.

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来源
《中国物理：英文版》 |2018年第3期|201-204|共4页
作者
张真真; 符张龙; 郭旭光; 曹俊诚;
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作者单位

Key Laboratory of Terahertz Solid-State Technology;

Shanghai Institute of Microsystem and Information Technology;

Chinese Academy of Sciences;

University of Chinese Academy of Sciences;

Ministry of Education and Shanghai Key Laboratory of Modern Optical System and Shanghai Terahertz Research Center;

University of Shanghai for Science and Technology;

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原文格式 PDF
正文语种 chi
中图分类半导体光电器件;
关键词
光电探测器; THz; 敏感; 故障电压; 测量模式; 接触电阻; 频率表; 试验性;

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4.3 THz quantum-well photodetectors with high detection sensitivity

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