High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

伍伟; 张波; 方健; 罗小蓉; 李肇基

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High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

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摘要

A novel super-junction lateral double-diffused metal-oxide semiconductor(SJ-LDMOS) with a partial lightly doped P pillar(PD) is proposed.Firstly,the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect.Secondly,the new electric field peak produced by the P/P-junction modulates the surface electric field distribution.Both of these result in a high breakdown voltage(BV).In addition,due to the same conduction paths,the specific on-resistance(R on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS.Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20V/μm at a 15μm drift length,resulting in a BV of 300V.

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来源
《中国物理：英文版》 |2013年第6期|633-636|共4页
作者
伍伟; 张波; 方健; 罗小蓉; 李肇基;
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作者单位

State Key Laboratory of Electronic Thin Films and Integrated Devices;

University of Electronic Science and Technology of China;

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原文格式 PDF
正文语种 chi
中图分类半导体理论;
关键词
super-junction; lateral double-diffused metal-oxide semiconductor; partial lightly doped pillar; electric field modulation; breakdown voltage;

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High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

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