The deposition of a Cu seed layer film is investigated by supercritical fluid deposition(SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper in supercritical CO2(scCO2).The effects of deposition temperature,precursor,and H2 concentration are investigated to optimize Cu deposition.Continuous metallic Cu films are deposited on Ru substrates at 190℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2.A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films.For a H2 concentration above 0.56 mol/L,the root-mean-square(RMS) roughness of a Cu film decreases as the H2 concentration increases.Finally,a 20-nm thick Cu film with a smooth surface,which is required as a seed layer in advanced interconnects,is successfully deposited at a high H2 concentration(0.75 mol/L).
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