SBA-15(mesoporous SiO_2) is used to stabilize and transfer F-in the NH_4BF_4 CVD reaction for the first time, and a large-scale crystalline h-BN phase can be prepared. We successfully fabricate hollow h-BN capsules with collapsed surfaces in our designed NH_4BF_4 CVD system. Optimum temperature conditions are obtained, and a detailed formation mechanism is further proposed. The successful SBA-15-assisted NH_4BF_4 CVD route is of importance and enriches the engineering technology in the h-BN single-source CVD reaction.
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机译:ChemInform Abstract: Chemical Vapor Deposition Precursor Chemistry. Part 2. Formation of Pure Aluminum, Alumina, and Aluminum Boride Thin Films from Boron‐ Containing Precursor Compounds by Chemical Vapor Deposition.
机译:Massachusetts Institute of Technology Reports Findings in Chemical Vapor Deposition (Revealing Variable Dependences in Hexagonal Boron Nitride Synthesis via Machine Learning)