A review for compact model of graphene field-effect transistors

Nianduan Lu; Lingfei Wang; Ling Li; Ming Liu

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A review for compact model of graphene field-effect transistors

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Graphene has attracted enormous interests due to its unique physical,mechanical,and electrical properties.Specially,graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices.As a critical step in the design cycle of modem IC products,compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations.The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors.Special attention is devoted to the charge sheet model,drift-diffusion model,Boltzmann equation,density of states (DOS),and surface-potential-based compact model.Finally,an outlook of this field is briefly discussed.

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《中国物理：英文版》 |2017年第3期|96-113|共18页
作者
Nianduan Lu; Lingfei Wang; Ling Li; Ming Liu;
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作者单位

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

University of Chinese Academy of Sciences, Beijing 100049, China;

Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China;

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China;

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

University of Chinese Academy of Sciences, Beijing 100049, China;

Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China;

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

University of Chinese Academy of Sciences, Beijing 100049, China;

Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China;

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A review for compact model of graphene field-effect transistors

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