The mobility edge (ME) model with single Gaussian density of states (DOS) is simplified based on the recent exper-imental results about the Einstein relationship. The free holes are treated as being non-degenerate, and the trapped holes are dealt with as being degenerate. This enables the integral for the trapped holes to be easily realized in a program. The J–V curves are obtained through solving drift-diffusion equations. When this model is applied to four organic diodes, an obvious deviation between theoretical curves and experimental data is observed. In order to solve this problem, a new DOS with exponential tail is proposed. The results show that the consistence between J–V curves and experimental data based on a new DOS is far better than that based on the Gaussian DOS. The variation of extracted mobility with temperature can be well described by the Arrhenius relationship.
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