首页> 中文期刊> 《中国物理:英文版》 >Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

         

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  • 来源
    《中国物理:英文版》 |2014年第11期|536-540|共5页
  • 作者单位

    Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;

    Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;

    Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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