The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

Bao Bo-Cheng; Feng Fei; Dong Wei; Pan Sai-Hu

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The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

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摘要

A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example,upon which the voltage-current relationships (VCRs) between two parallel memristive circuits-a parallel memristor and capacitor circuit (the parallel MC circuit),and a parallel memristor and inductor circuit (the parallel ML circuit)-are investigated.The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters,and the frequency and amplitude of the sinusoidal voltage stimulus.An equivalent circuit model of the memristor is built,upon which the circuit simulations and experimental measurements of both the parallel MC circuit and the parallel ML circuit are performed,and the results verify the theoretical analysis results.

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《中国物理：英文版》 |2013年第6期|621-626|共6页
作者
Bao Bo-Cheng; Feng Fei; Dong Wei; Pan Sai-Hu;
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作者单位

School of Information Science and Engineering, Changzhou University, Changzhou 213164, China;

School of Information Science and Engineering, Changzhou University, Changzhou 213164, China;

School of Information Science and Engineering, Changzhou University, Changzhou 213164, China;

School of Information Science and Engineering, Changzhou University, Changzhou 213164, China;

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The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

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