Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

著录项

• 来源
  《中国物理：英文版》 |2012年第5期|473-478|共6页
• 作者

  Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi;

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• 作者单位

  State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China;

  Graduate University of Chinese Academy of Sciences,Beijing 100049,China;

  State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China;

  State Key Laboratory of Functional Materials for lnformatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China;

  Graduate University of Chinese Academy of Sciences,Beijing 100049,China;

  State Key Laboratory of Functional Materials for lnformatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China;

  Graduate University of Chinese Academy of Sciences,Beijing 100049,China;

  State Key Laboratory of Functional Materials for lnformatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China;

  State Key Laboratory of Functional Materials for lnformatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China;

  The Key Laboratory of Thin Films of Jiangsu,Departments of Physics,Soochow University,Suzhon 215006,China;

  State Key Laboratory of Functional Materials for lnformatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China;

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