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Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

机译:在多晶镍箔上优化钛酸钡薄膜的生长和介电性能

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摘要

Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition (PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr ~ 400 and tanδ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.
机译:钛酸钡(BTO)薄膜通过聚合物辅助沉积(PAD)技术沉积在多晶镍箔上,基于热动力学分析精心优化了包括环境温度和退火温度在内的生长条件,以控制氧化过程和相互扩散。研究了在不同温度下退火的BTO薄膜的表面形貌和介电性能,并进行了比较。讨论了制备条件,微观结构和介电性能之间的相关性。在100 kHz时εr〜400和tanδ<0.025。数据表明,PAD在多晶Ni衬底上生长的BTO膜在器件应用中很有前景。

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  • 来源
    《中国物理:英文版》 |2012年第6期|498-503|共6页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;

    Department of Physics and Astronomy,University of Texas at San Antonio,San Antonio,Texas 78249,USA;

    Department of Physics and the Texas Center for Superconductivity,University of Houston,Houston,Texas 77204,USA;

    State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;

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