Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

著录项

• 来源
  《中国物理：英文版》 |2006年第6期|1335-1338|共4页
• 作者

  Zhang Yang; Zeng Yi-Ping; Ma Long; Wang Bao-Qiang; Zhu Zhan-Ping; Wang Liang-Chen; Yang Fu-Hua;

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• 作者单位

  Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

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• 原文格式 PDF
• 正文语种 chi
• 中图分类 物理学;
• 关键词

  resonant tunnelling diode; InP substrate; molecular beam epitaxy; high resolution trans mission electron microscope;

  机译：共振隧穿二极管InP衬底分子束外延高分辨率透射电子显微镜;