A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

Ma Shu-Yi; Chen Hui; Xiao Yong; Ma Zi-Jun; Sun Ai-Min

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A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

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摘要

Ge/SiO2 and Si/SiO2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650-660 nm. The EL mechanisms of the structures are discussed.

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来源
《中国物理：英文版》 |2004年第2期|264-267|共4页
作者
Ma Shu-Yi; Chen Hui; Xiao Yong; Ma Zi-Jun; Sun Ai-Min;
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作者单位

Department of Physics, Northwest Normal University, Lanzhou 730070, China;

Department of Physics, Northwest Normal University, Lanzhou 730070, China;

Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China;

Department of Physics, Northwest Normal University, Lanzhou 730070, China;

Department of Physics, Northwest Normal University, Lanzhou 730070, China;

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原文格式 PDF
正文语种 chi
中图分类物理学;
关键词
electroluminescence, Ge/SiO2 film, Si/SiO2 film;

机译：电致发光;Ge / SiO2膜;Si / SiO2膜;

A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

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