Phase transition and charge transport through a triple dot device beyond the Kondo regime

Yong-Chen Xiong; Zhan-Wu Zhu; Ze-Dong He

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Phase transition and charge transport through a triple dot device beyond the Kondo regime

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Semiconductor quantum dot structure provides a promising basis for quantum information processing, within which to reveal the quantum phase and charge transport is one of the most important issues. In this paper, by means of the numerical renormalization group technique, we study the quantum phase transition and the charge transport for a parallel triple dot device in the strongly correlated limit, focusing on the effect of inter-dot hopping t beyond the Kondo regime. We find the quantum behaviors depend closely on the initial electron number on the dots, and the present model may map to single, double, and side-coupled impurity models in different parameter spaces. An orbital spin-1/2 Kondo effect between the conduction leads and the bonding orbital, and several magnetic-frustration phases are demonstrated when t is adjusted to different regimes. To understand these phenomena, a canonical transformation of the energy levels is given, and important physical quantities with respect to increasing t and necessary theoretical discussions are shown.

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《中国物理：英文版》 |2018年第10期|708-715|共8页
作者
Yong-Chen Xiong; Zhan-Wu Zhu; Ze-Dong He;
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School of Science, and Advanced Functional Material and Photoelectric Technology Research Institution, Hubei University of Automotive Technology, Shiyan 442002, China;

School of Science, and Advanced Functional Material and Photoelectric Technology Research Institution, Hubei University of Automotive Technology, Shiyan 442002, China;

School of Science, and Advanced Functional Material and Photoelectric Technology Research Institution, Hubei University of Automotive Technology, Shiyan 442002, China;

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Phase transition and charge transport through a triple dot device beyond the Kondo regime

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