Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology

著录项

• 来源
  《中国物理：英文版》 |2021年第7期|674-678|共5页
• 作者

  Shuang Sun; Jian-Huan Wang; Bao-Tong Zhang; Xiao-Kang Li; Qi-Feng Cai; Xia An; Xiao-Yan Xu; Jian-Jun Zhang; Ming Li;

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• 作者单位

  Department of Micro-Nanoelectronics Peking University Beijing 100871 China;

  Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China;

  Department of Micro-Nanoelectronics Peking University Beijing 100871 China;

  Department of Micro-Nanoelectronics Peking University Beijing 100871 China;

  Department of Micro-Nanoelectronics Peking University Beijing 100871 China;

  Department of Micro-Nanoelectronics Peking University Beijing 100871 China;

  Department of Micro-Nanoelectronics Peking University Beijing 100871 China;

  Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China;

  Department of Micro-Nanoelectronics Peking University Beijing 100871 China;

  Beijing Laboratory of Future IC Technology and Science Peking University Beijing 100871 China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词