A lateral current regulator diode(CRD) with field plates is proposed and experimentally demonstrated.The proposed CRD is based on the junction field-effect transistor(JFET) structure.A cathode field plate is adopted to alleviate the channel-length modulation effect and to improve the saturated Ⅰ-Ⅴ characteristics.An anode field plate is induced to achieve a high breakdown voltage V_B of the CRD.The influence of the key device parameters on the Ⅰ-Ⅴ characteristics of the lateral CRD are discussed.Experimental results show that the proposed CRD presents good Ⅰ-Ⅴ characteristics with a high VB about 180 V and a low knee voltage(V_k) below 3 V.Furthermore,the proposed CRD has a negative temperature coefficient.The well characteristic of the proposed CRD makes it a cost-effective solution for light-emitting-diode lighting.
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